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Part Number: FD16001200R17HP4B2BOSA1
Manufacturer:
Infineon
Category:
IGBT Modules
Availability:
6504
Description:
Trans IGBT Module N-CH 1700V 1.6KA 10500000mW 9-Pin
Requeset For
FD16001200R17HP4B2BOSA1
Please submit the following information.
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Quantity and Demand
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Detailed Product Description
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Unconfirmed
Automotive
No
PPAP
No
Channel Type
N
Configuration
Dual
Typical Collector Emitter Saturation Voltage (V)
1.9
Maximum Collector-Emitter Voltage (V)
1700
Maximum Power Dissipation (mW)
10500000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
1600
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Pin Count
9
Mounting
Screw
Package Length
190
Package Width
140
PCB changed
9
,
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Unconfirmed
Automotive
No
PPAP
No
Channel Type
N
Configuration
Dual
Typical Collector Emitter Saturation Voltage (V)
1.9
Maximum Collector-Emitter Voltage (V)
1700
Maximum Power Dissipation (mW)
10500000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
1600
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Pin Count
9
Mounting
Screw
Package Length
190
Package Width
140
PCB changed
9
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KEMET Corporation
KYOCERAAVX Components
3M
Littelfuse
Microchip Technology
Micron Technology
Microsemi
Molex
Murata Manufacturing
Nexperia
NVIDIA Corporation
NXP Semiconductors
onsemi
Panasonic
Raspbery Pi Foundation
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ROHM Semiconductor
Silicon Labs
ABB
STMicroelectronics
TDK
TE Connectivityr
Texas Instruments
Vishay
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